Panasonic MA3D755 (MA7D55) Specifications

Text of Panasonic MA3D755 (MA7D55) User Guide:

• Panasonic MA3D755 (MA7D55), Schottky Barrier Diodes (SBD) 1 Publication date: January 2004 SKH00045BED MA3D755 (MA7D55) Silicon epitaxial planar type (cathode common) For switching mode power supply ■ Features • Low forward voltage V F • High dielectric breakdown voltage: > 5 kV • Easy-to-mount, due to its V cut lead end ■ Absolute Maximum Ratings T C = 25°C Parameter Symbol Rating Unit Repetitive peak reverse voltage V RRM 60 V Forward current (Average) I F(AV) 5A Non-repetitive peak forward I FSM 90 A surge current * Junction temperature T j −40 to +125 °C Storage temperature T stg −40 to +125 °C Parameter Symbol Conditions Min Typ

• 2 MA3D755 SKH00045BED I F  V F I R  V R V F  T a I R  T a C t  V R 10 −4 0 0.4 0.8 1.2 10 −3 10 −2 10 −1 1 10 Forward voltage V F ( V ) Forward current I F ( A ) T a = 125°C 75°C 25°C −20°C 10 −3 0 102030405060 10 −2 10 −1 1 10 10 2 Reverse voltage V R ( V ) Reverse current I R ( mA ) T a = 125°C 75°C 25°C 0 0

• Panasonic MA3D755 (MA7D55), Request for your special attention and precautions in using the technical information and semiconductors described in this book (1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2)The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibi

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