Panasonic MA3J700 Specification Sheet

Text of Panasonic MA3J700 User Guide:

• Panasonic MA3J700, Schottky Barrier Diodes (SBD) 1 Publication date: April 2004 SKH00052BED MA3J700 (MA10700) Silicon epitaxial planar type For high frequency rectification ■ Features • Forward current (Average) I F(AV) = 500 mA rectification is possible • Optimum for high frequency rectification because of its short re- verse recovery time t rr ■ Absolute Maximum Ratings T a = 25°C Parameter Symbol Rating Unit Reverse voltage V R 40 V Repetitive peak reverse voltage V RRM 40 V Forward current (Average) I F(AV) 500 mA Non-r

• 2 MA3J700 SKH00052BED I F  V F I R  V R V F  T a I R  T a C t  V R 10 −2 0 0.1 0.2 0.3 0.4 0.5 0.6 10 −1 1 10 10 2 10 3 Forward voltage V F ( V ) Forward current I F ( mA ) T a = 100°C −20°C 25°C 1 0 102030405060 10 10 2 10 3 10 4 Reverse voltage V R ( V ) Reverse current I R ( µA ) T a = 100°C 25°C 0 0.2 0.

• Panasonic MA3J700, Request for your special attention and precautions in using the technical information and semiconductors described in this book (1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2)The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility

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