Toshiba TLP848 Product Manual

Text of Toshiba TLP848 User Guide:

• Toshiba TLP848, TLP848 2007-10-01 1 TOSHIBA Photointerrupter Infrared LED + Phototransistor TLP848 ○ Camera Module for Mobile Phone ○ Digital Still Camera and Video Camera ○ Personal Equipment and Small-sized OA Equipment The TLP848 is a surface-mount photointerrupter which is composed of a GaAs infrared LED and a Si phototransistor. It is an ultra compact package. Moreover it has a wider gap width than 1mm gap width of industry-standard and has a high resolution. • Ultra compact package : 2.8×1.9×2.5mm (typ.) • Surface-mount type • Lead(Pb)

• TLP848 2007-10-01 2 Optical and Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test conditions Min Typ. Max Unit Forward voltage V F I F = 10 mA 1.10 1.23 1.40 V Reverse current I R V R = 5 V ⎯ ⎯ 10 μA LED Peak emission wavelength λ P I F = 10 mA ⎯ 940 ⎯ nm Dark current I D (I CEO ) V CE = 12 V, I F = 0 ⎯ ⎯ 0.05 μA Detect

• Toshiba TLP848, TLP848 2007-10-01 3 Package Dimensions: TOSHIBA 11-3B1 Weight: 0.017 g (typ.) Pin Connection Unit: mm Tolerance : ±0.1mm unless otherwise specified ( ): Reference value Gate position Center of sensor 1: Cathode 2: Anode 3: Collector 4: Emitter 2 1 3 4

• Toshiba TLP848, TLP848 2007-10-01 4 Handling and Mounting Precautions • Care must be taken in relation to the environment in which the device is to be installed. Oil or chemicals may cause the package to melt or crack. • The device should be mounted on an unwarped surface. • Do not apply stress to the resin at high temperature. • The resin part is easily scratched, so avoid friction with hard materials. • When installing the assembly board in equipment, ensure that this product does not come into contact with other co

• Toshiba TLP848, TLP848 2007-10-01 5 Mounting Methods 1. The example of temperature profile (reflow soldering) • The first reflow process should be performed under the above temperature profile within 168 h after opening the bag. • If a second reflow process needs to be performed, it should be performed within 168 h of the first reflow under the above temperature profile. • Storage conditions before the second reflow process: 30°C, 70% RH (max) • Do not perform wave soldering and manual soldering with a soldering iron. 2. Recommended soldering pattern Unit: mm

• Toshiba TLP848, TLP848 2007-10-01 6 Packing Specification 1. Tape dimensions 1.75±0.1 φ1.5 + 0.1 − 0 4.0±0.1 2.0±0.05 4.0±0.1 φ1.1±0.1 3.5±0.05 (2.75) 8.0±0.2 A A' A A' B B' B B' max 5° 2.1±0.1 max 5° 0.3±0.05 2.7±0.1 3.1±0.1 max 5° max 5° Unit: mm Device direction

• TLP848 2007-10-01 7 2. Reel dimensions 3. Leader and trailer sections of tape 2 ± 0.5 φ13 ± 0.5 φ21 ± 0.8 11.4 ± 1 9 ± 0.3 φ60 φ180 +0 −4 Unit: mm (Note 1) 100 mm or more Leading part: 400 mm or more 160 mm or more (Note 2) Note1: Empty trailer section Note2: Empty leader section

• Toshiba TLP848, TLP848 2007-10-01 8 4. Packing format (1) Packing quantity Reel 1,500 pcs Carton 7,500 pcs (2) Packing form Each reel is sealed in an aluminum bag that contains a desiccant with a humidity indicator.

• Toshiba TLP848, TLP848 2007-10-01 9 0.01 0.1 1 10 1 10 100 1 10 100 1 10 100 1 10 100 0.9 1 1.1 1.2 1.3 1.4 1.5 0 0.5 1 1.5 2 2.5 3 3.5 4 024681012 0 20 40 60 80 0 20406080100 0 5 10 15 20 25 30 35 0 20406080100 I F – Ta Ambient temperature Ta (°C) Allowable forward current I F (mA) I F – V F (typ. ) Forward voltage V F (V) Forward current I F (mA) 0 Ta = 75°C 50 25 −25 I C – I F Forward current I F (mA) Collector current I C (mA) Ta = 25°C V CE = 2V V CE = 0.4V Sample 1 Sample 2 I C / I F – I

• Toshiba TLP848, TLP848 2007-10-01 10 1 10 100 1000 110100 0.00 0.04 0.08 0.12 0.16 0.20 -40 -20 0 20 40 60 80 100 0.1 1 10 100 1000 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 0 20 40 60 80 100 120 0.2 0.4 0.6 0.8 1 1.2 -40 -20 0 20 40 60 80 100 Relative I C – Ta (typ.) Ambient temperature Ta (°C) Relative collector current V CE = 2V I F = 20mA I F = 10mA I F = 5mA V CE (sat) – Ta (typ.) Ambient temperature Ta (°C) Collector-emitter saturation voltage V CE(sat) (V) I C = 0.15mA I F = 10mA Switchi

• Toshiba TLP848, TLP848 2007-10-01 11 Relative Positioning of Shutter and Device For normal operation, position the shutter and the device as shown in the figure below. By considering the device's detection direction characteristic and switching time, determine the shutter slit width and pitch. 0 0.2 0.4 0.6 0.8 1 1.2 -2 -1 0 1 2 3 4 0 0.2 0.4 0.6 0.8 1 1.2 -1.2 -0.8 -0.4 0 0.4 0.8 1.2 Detection position characteristics (1) (typ.) Distance d (mm) Relative collector current Detection position characteris

• Toshiba TLP848, TLP848 2007-10-01 12 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a mal

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