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Toshiba TPC8402 Handbook

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Toshiba TPC8402 User Manual
Toshiba TPC8402 User Guide
Toshiba TPC8402 Online Manual

Text of Toshiba TPC8402 User Guide:

  • Toshiba TPC8402, TPC8402 2006-11-13 1 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (π−MOSVI/U−MOSII) TPC8402 Lithium-Ion Secondary Battery Applications Notebook PCs Portable Equipment Applications z Low drain−source ON resistance : P Channel R DS (ON) = 27 mΩ (typ.) N Channel R DS (ON) = 37 mΩ (typ.) z High forward transfer admittance : P Channel |Y fs | = 7 S (typ.) N Channel |Y fs | = 6 S (typ.) z Low leakage current : P Channel I DSS = −10 µA (V DS = −30 V) N Channel I DSS =

  • Toshiba TPC8402, TPC8402 2006-11-13 2 Thermal Characteristics Characteristics Symbol Max. Unit Single-device operation (Note 3a) R th (ch-a) (1) 83.3 Thermal resistance, channel to ambient (t = 10s) (Note 2a) Single-device value at dual operation (Note 3b) R th (ch-a) (2) 125 Single-device operation (Note 3a) R th (ch-a) (1) 167 Thermal resistance, channel to ambient (t = 10s) (Note 2b) Single-device value at dual operation (Note 3b) R th (ch-a) (2) 278 °C/W Marking Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: a) Device mounted on a glass-epoxy board (a)

  • Toshiba TPC8402, TPC8402 2006-11-13 3 P-ch Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min. Typ. Max. Unit Gate leakage current I GSS V GS = ±16 V, V DS = 0 V — — ±10 µA Drain cut−off current I DSS V DS = −30 V, V GS = 0 V — — −10 µA V (BR) DSS I D = −10 mA, V GS = 0 V −30 — — Drain−source breakdown voltage V (BR) DSX I D = −10 mA, V GS = 20 V −15 — — V Gate threshold voltage V th V DS = −10 V, I D = −1 mA −0.8 — −2.0 V R DS (ON) V GS = −4 V, I D = −2.2 A — 55 65 Drain−source ON resistan

  • Toshiba TPC8402, TPC8402 2006-11-13 4 N-ch Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min. Typ. Max. Unit Gate leakage current I GSS V GS = ±16 V, V DS = 0 V — — ±10 µA Drain cut−off current I DSS V DS = 30 V, V GS = 0 V ― ― 10 µA Drain−source breakdown voltage V (BR) DSS I D = 10 mA, V GS = 0 V 30 ― ― V Gate threshold voltage V th V DS = 10 V, I D = 1 mA 0.8 ― 2.0 V R DS (ON) V GS = 4 V, I D = 2.5 A ― 58 80 m�

  • TPC8402 2006-11-13 5 P-ch Drain current I D (A) R DS (ON) – I D Drain−source voltage R DS (ON) (mΩ) V GS = −4 V V GS = −10 V −0.1 −1 −100 10 100 5 30 50 −10 −0.3 −3 −30 300 500 Common source Ta = 25°C Pulse test

  • Toshiba TPC8402, TPC8402 2006-11-13 6 P-ch DRAIN POWER DISSIPATION P D (W) AMBIENT TEMPERATURE Ta (°C) P D – Ta (1) (2) 0 0 50 100 150 200 0.5 1.0 1.5 2.0 (4) (3) DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a) (NOTE 2a) (1) SINGLE-DEVICE OPERATION (NOTE 3a) (2) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) DEVICE MOUNTED ON A GLASS-EPOXY BOARD (b) (NOTE 2b) (3) SINGLE-DEVICE OPERATION (NOTE 3a) (4) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) t = 10 s Ambient temperature Ta (°C) R DS (ON) – Ta Drain−source ON resistance R DS (ON) (mΩ) −80 −40 0 40

  • Toshiba TPC8402, TPC8402 2006-11-13 7 P-ch r th − t w PULSE WIDTH t w (s) TRANSIENT THERMAL IMPEDANCE r th (°C/W) 0.1 0.001 0.01 0.1 1 10 100 1000 1 0.3 0.5 3 5 10 30 50 100 300 1000 500 DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a) (NOTE 2a) (1) SINGLE-DEVICE OPERATION (NOTE 3a) (2) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) DEVICE MOUNTED ON A GLASS-EPOXY BOARD (b) (NOTE 2b) (3) SINGLE-DEVICE OPERATION (NOTE 3a) (4) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) (1) SINGLE PULSE (2) (3) (4)

  • Toshiba TPC8402, TPC8402 2006-11-13 9 N-ch DRAIN POWER DISSIPATION P D (W) AMBIENT TEMPERATURE Ta (°C) P D – Ta (1) (2) 0 0 50 100 150 200 0.5 1.0 1.5 2.0 (4) (3) DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a) (NOTE 2a) (1) SINGLE-DEVICE OPERATION (NOTE 3a) (2) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) DEVICE MOUNTED ON A GLASS-EPOXY BOARD (b) (NOTE 2b) (3) SINGLE-DEVICE OPERATION (NOTE 3a) (4) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) t = 10 s

  • Toshiba TPC8402, TPC8402 2006-11-13 10 N-ch r th − t w PULSE WIDTH t w (s) TRANSIENT THERMAL IMPEDANCE r th (°C/W) 0.1 0.001 0.01 0.1 1 10 100 1000 1 0.3 0.5 3 5 10 30 50 100 300 1000 500 DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a) (NOTE 2a) (1) SINGLE-DEVICE OPERATION (NOTE 3a) (2) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) DEVICE MOUNTED ON A GLASS-EPOXY BOARD (b) (NOTE 2b) (3) SINGLE-DEVICE OPERATION (NOTE 3a) (4) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) (1) SINGLE PULSE (2)

  • TPC8402 2006-11-13 11 • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or o

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